Temperature Stability Assessment of GaN Power Amplifiers with Matching Tantalum Capacitors

Temperature Stability Assessment of GaN Power Amplifiers with Matching Tantalum Capacitors
Written By: T.Zednicek | R.Demcko | M.Weaver | D.West | T. Blecha | F.Steiner | J.Svarny | R.Linhart

Abstract:
Wide band gap GaN and SiC devices are expected to experience high levels of growth in applications ranging from power conversion to RF transistors and MMICs. End users recognize the advantages of GaN technology as an ability to operate under higher currents and voltages. RF GaN market is expected to grow at 22.9 % CAGR over 2017-2023, boosted by implementation of 5G networks. [1]

During the past years, the wide band semiconductors have reported achievement of >1000 V BDV that opens new challenges for high power industrial applications such as electric traction systems in trams, trolley buses or high-speed trains etc.

Decoupling and BIAS matching tantalum capacitors are used due to its stability of capacitance value over wide temperature range, stable capacitance with BIAS, no piezo noise sensitivity at small, low profile case sizes. They are not prone to wear out associated with Aluminum electrolytic capacitors and exhibit high reliability & stability across temperature, voltage and time.

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